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VT2060C-E3

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...


Vishay

VT2060C-E3

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VT2060C-E3, VFT2060C-E3, VBT2060C-E3, VIT2060C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT2060C 3 2 1 PIN 1 PIN 2 PIN 3 CASE VFT2060C 123 PIN 1 PIN 2 PIN 3 FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263AB K TO-262AA K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. 2 1 VBT2060C PIN 1 K PIN 2 HEATSINK VIT2060C PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY...




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