Document
VT2060G-E3, VFT2060G-E3, VBT2060G-E3, VIT2060G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT2060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT2060G
123
PIN 1
PIN 2
PIN 3
TO-262AA K
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
2 1
VBT2060G
PIN 1
K
PIN 2
HEATSINK
VIT2060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY.