VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trenc...
VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.40 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060G
123
PIN 1
PIN 2
PIN 3
TO-262AA K
2 1
VBT3060G
PIN 1
K
PIN 2
HEATSINK
VIT3060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 60 V 150 A 0.61 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package) Not recommended for PCB bottom side wave mounting Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for...
