DatasheetsPDF.com

VT760-E3

Vishay

Trench MOS Barrier Schottky Rectifier

VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rec...


Vishay

VT760-E3

File Download Download VT760-E3 Datasheet


Description
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AC TMBS ® ITO-220AC VT760 PIN 1 PIN 2 2 1 CASE TO-263AB K VFT760 PIN 1 PIN 2 TO-262AA K 2 1 FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VBT760 NC K A HEATSINK VIT760 NC A A K NC K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max. Package 7.5 A...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)