VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rec...
VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.50 V at IF = 5 A
TO-220AC
TMBS ®
ITO-220AC
VT760
PIN 1 PIN 2
2 1
CASE
TO-263AB
K
VFT760
PIN 1 PIN 2
TO-262AA K
2 1
FEATURES
Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package) Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
A NC
VBT760
NC K A HEATSINK
VIT760
NC
A
A K NC
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 7.5 A TJ max.
Package
7.5 A...