VEC2616

VEC2616 Power MOSFET 60V, 80mΩ, 3A, –60V, 137mΩ, –2.5A, Complementary This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 4V drive Low-Profile Package Complementary N-Channel and P-Channel MOSFET ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Typical Applications Motor Driver SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol N-Channel P-Channel Unit Drain to Source Voltage VDSS 60 −60 V Gate to Source Voltage VGSS ±20 ±20 V Drain Current (DC) ID 3 −2.5 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 −10 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) 1unit Total Dissipation When mounted on ceramic substrate (...