1N5817WS

SMD Type Schottky Diodes 1N5817WS ~ 1N5819WS TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability SOD-323F 12 Top View PIN DESCRIPTION PIN DESCRIPTION 1 Cathode 2 Anode Ƶ Absolute Maximum Ratings Ta = 25ć Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms Reverse Voltage Leakage Current Typical Junction Capacitance Junction Temperature Storage Temperature range Ta = 25ć Ta = 100ć Symbol VRRM VRMS VDC VF IFAV IFSM IR CJ TJ Tstg 1N5817WS 1N5818WS 1N5819WS 20 30 40 14 21 28 20 30 40 0.45 0.55 0.6 0.75 0.875 1 0.9 25 1 10 110 125 -55 to 125 Unit V A mA pF ć Ƶ Marking NO. Marking 1N5817WS SJ 1N5818WS SK 1N5819WS SL www.kexin.com.cn 1 SMD Type TransDisiotodress Average Forward Current (A) Schottky Di...