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VT60M45C-M3, VT60M45CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rec...
www.vishay.com
VT60M45C-M3, VT60M45CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5 A
TMBS ®
TO-220AB
VT60M45C
3 2 1
PIN 1
PIN 2
PIN 3
CASE
FEATURES Trench MOS
Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package
2 x 30 A 45 V 320 A 0.50 V
175 °C TO-220AB
Diode variations
Dual common cathode
MECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Bas...