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VT60M45CHM3

Vishay

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com VT60M45C-M3, VT60M45CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rec...


Vishay

VT60M45CHM3

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Description
www.vishay.com VT60M45C-M3, VT60M45CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.32 V at IF = 5 A TMBS ® TO-220AB VT60M45C 3 2 1 PIN 1 PIN 2 PIN 3 CASE FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A (TA = 125 °C) TJ max. Package 2 x 30 A 45 V 320 A 0.50 V 175 °C TO-220AB Diode variations Dual common cathode MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Bas...




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