Transistors
Power Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures 1) Darlington connection for high DC current gain...
Transistors
Power
Transistor (−100V , −2A)
2SB1316
2SB1316
zFeatures 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage Collector-emitter voltage
VCBO VCEO
−100 −100
Emitter-base voltage
Collector current
Collector 2SB1580 power dissipation 2SB1316
VEBO IC
PC
−8 −2 −3 2 1 10
Junction temperature
Tj 150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Unit V V V
A(DC) A(Pulse)
∗1
W ∗2
W(Tc=25°C) °C °C
zPackaging specifications and hFE
Type Package
hFE Marking
Code Basic ordering unit (pieces) ∗ Denotes hFE
2SB1580
MPT3 1k to 10k
BN∗ T100 1000
2SB1316
CPT3 1k to 10k
− TL 2500
zEquivalent circuit
C
B
R1 R2
E
R1 3.5kΩ R2 300Ω
B : Base C : Collector E : Emitter
zE...
