2SC3942

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 0.1 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 0.2 A 10 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3942 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA VBE(on) Base-Emitter On Voltage IC= 30mA ; VCE= 10V ICEO Collector Cutoff Current VCE= 200V; IB= 0 hFE DC Current Gain IC= 5mA; VCE= 50V fT Current-Gain—Bandwidth Product IC= 20mA; VCE= 30V COB Output Capacitance IE= 0; VCB= 30V, ftest= 1MHz 2SC3942 MIN TYP. MAX UNIT 300 V 300 V 7 V 1.5 V 1.2 V...