JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
KTC4369 TRANSISTOR (NPN)
FEA...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate
Transistors
KTC4369
TRANSISTOR (
NPN)
FEATURES z High Transition Frequency z Good Linearity of hFE z General Purpose Application
TO – 220F
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 30 30 5 3 2 62.5 150
-55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency
Symbol V(BR)CBO V(BR)C...