MOSFET
Main Product Characteristics:
VDSS RDS(on)
60V 3Ω(max.)
ID 0.3A
SOT-23
Features and Benefits:
Advanced MOSFET pr...
Description
Main Product Characteristics:
VDSS RDS(on)
60V 3Ω(max.)
ID 0.3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating:2000V HBM 150℃ operating temperature
2N7002KU
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and ...
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