70R900P MOSFET Datasheet

70R900P Datasheet, PDF, Equivalent


Part Number

70R900P

Description

N-channel MOSFET

Manufacture

MagnaChip

Total Page 10 Pages
Datasheet
Download 70R900P Datasheet


70R900P
MMIS70R900P Datasheet
MMIS70R900P
700V 0.9N-channel MOSFET
Description
MMIS70R900P is power MOSFET using magnachips advanced super junction technology that
can realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
ID
Qg,typ
Value
750
0.9
3
5
15
Unit
V
V
A
nC
Package & Internal Circuit
D
G
DS
G
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC DC Converters
Ordering Information
Order Code
Marking
MMIS70R900PTH 70R900P
Temp. Range
-55 ~ 150
Package
TO-251-VS
(IPAK-VS)
Packing
Tube
RoHS Status
Halogen Free
Mar. 2016 Revision 1.3
1 MagnaChip Semiconductor Ltd.

70R900P
MMIS70R900P Datasheet
Absolute Maximum Rating (Tc=25unless otherwise specified)
Parameter
Symbol
Rating
Unit Note
Drain Source voltage
Gate Source voltage
Continuous drain current
Pulsed drain current(1)
VDSS
VGSS
ID
IDM
700
±30
5
3
15
V
V
A TC=25
A TC=100
A
Power dissipation
PD 40 W
Single - pulse avalanche energy
EAS 50 mJ
MOSFET dv/dt ruggedness
dv/dt
50 V/ns
Diode dv/dt ruggedness
dv/dt
15 V/ns
Storage temperature
Maximum operating junction
temperature
1) Pulse width tP limited by Tj,max
2) ISD ID, VDS peak V(BR)DSS
Tstg
-55 ~150
Tj 150
Thermal Characteristics
Parameter
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Symbol
Rthjc
Rthja
Value
3.1
62.5
Unit
/W
/W
Mar. 2016 Revision 1.3
2 MagnaChip Semiconductor Ltd.


Features MMIS70R900P Datasheet MMIS70R900P 700V 0.9Ω N-channel MOSFET  Description MMIS70R900P is power MOSFET using magn achip’s advanced super junction techn ology that can realize very low on-resi stance and gate charge. It will provide much high efficiency by using optimize d charge coupling technology. These use r friendly devices give an advantage of Low EMI to designers as well as low sw itching loss.  Key Parameters Para meter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 750 0.9 3 5 15 Unit V Ω V A nC  Package & Internal Cir cuit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche T ested  Green Package – Pb Free Pla ting, Halogen Free  Applications PFC Power Supply Stages  Switching Applications  Adapter  Motor Con trol  DC – DC Converters  Orde ring Information Order Code Marking MMIS70R900PTH 70R900P Temp. Range -55 ~ 150℃ Package TO-251-VS (IPAK-VS) Packing Tube RoHS Statu.
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