1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(PNP)
TO-251/TO-252-2L Transistor
TO-251
1 23
Features
High breakdown voltage Ado...
1.BASE 2.COLLECTOR 3.EMITTER
2SA1700(
PNP)
TO-251/TO-252-2L
Transistor
TO-251
1 23
Features
High breakdown voltage Adoption of MBIT process Excellent hFE linearity
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-400
V
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous
-0.2
A
PC Collector Power Dissipation
1
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
TO-252-2L
Dimensions in inches and (millimeters)
otherwise specified)
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC =-10µA,IE=0
-400
V
Collector-emitter breakdown voltage
V(BR)CEO IC =-1mA,IB=0
-400
V
Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
V(BR)EBO ICBO IEBO
IE=-10µA,IC=0 VCB=-300V,IE=0 VEB=-4V,IC=0
-5 V -0.1 µA -0.1 µ...
