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MJD117L

EPITAXIAL PLANAR PNP TRANSISTOR

Description

SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. FEATURES High DC Current Gain. : hFE=1000(Min.), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERI...

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