Epitaxial Planar PNP Transistor
FEATURES
z Low formed for surface mount
Pb
application.
Lead-free
z Electrically s...
Epitaxial Planar
PNP Transistor
FEATURES
z Low formed for surface mount
Pb
application.
Lead-free
z Electrically similar to popular and TIP32C.
z Straight Lead.
APPLICATIONS
z General purpose amplifier.
z Low speed switching applications.
Production specification
MJD32C
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Voltage Collector-Emitter Voltage
-100 -100
V V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-3 A
ICP Collector Current -Peak
-5 A
IB Base Current
-1 A
PC Collector Power Dissipation
1.5 W
Tj ,Tstg
Junction and Storage temperature range
-65 to +150
℃
V/(W)034 Rev.A
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Production specification
Epitaxial Planar
PNP Transistor
MJD32C
ELECTRICAL CHARACTERISTICS@ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
UNIT
Collector-emitter sustaining voltage
VCEO(sus) IC=-3...
