SEMICONDUCTOR
TECHNICAL DATA
PNP EPITAXIAL SILICON TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary ...
SEMICONDUCTOR
TECHNICAL DATA
PNP EPITAXIAL SILICON
TRANSISTOR
HIGH POWER AMPLIFIER APPLICATION
FEATURES
* Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.
2SB688
1 TO-3P
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG
1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L
RATINGS -120 -120 -5 -10 -1 80 150
-40 ~ +150
UNIT V V V A A W ℃ ℃
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance
SYMBOL
ICBO IEBO V(BR)CEO hFE VCE(sat) VBE fT Cob
TEST CONDITIONS
VCB = -120V, IE = 0 VEB = -5V, IC = 0...