SMD Type
MOSFICET
MOS Field Effect Power Transistor 2SK1284
Features
Low on-state resistance RDS(on) 0.32 .@VGS=10V,I...
SMD Type
MOSFICET
MOS Field Effect Power
Transistor 2SK1284
Features
Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode
+0.29.70 -0.2
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
+0.151.50 -0.15
3.80
+0.155.55 -0.15
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
+0.150.50 -0.15
+0.281.50 -0.1
+0.252.65 -0.1
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10ms, duty cycle 5%
Symbol VDSS VGSS ID ID
PD
Tch Tstg
Rating 100 20 3.0 12 2.0 1.0 150
-55 to +150
Unit V V A A W W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance
Drain to source on-state resistanc...
