Document
2SA1346(3CG1346)
PNP /SILICON PNP TRANSISTOR
:、、。
Purpose: Switching, inverter circuit, interface circuit and driver circuit applications. :,。 Features: Built-in bias resistor, small-sized package.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO -50 V
VCEO -50 V
VEBO -10 V
IC
-100
mA
ICP
-200
mA
PC 300 mW
Tj 150 ℃
Tstg -55~150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R2/R1
Test condition
IC=-10μA IC=-100μA VCB=-40V VCE=-40V VEB=-5.0V VCE=-5.0V IC=-10mA VCE=-10V VCB=-10V VCE=-5.0V VCE=-0.2V
IE=0 RBE=∞ IE=0 IB=0 IC=0 IC=-5.0mA IB=-0.5mA IC=-5.0mA f=1.0MHz IC=-100μA IC=-5.0mA
Min
-50 -50
-70 50
-0.8 -1.0 15 0.9
Rating
Typ
-113
-0.1 200 5.5 -1.