BF550R

Silicon PNP HF Transistor Applications RF-IF amplifier specially for thick and thin film circuits. Features D High power gain D Low noise figure 1 BF550/BF550R 1 23 94 9280 BF550 Marking: LA Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb ≤ 60°C Junction temperature Parameters Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 15) mm3 plated with 35 mm Cu 32 95 10527 BF550R Marking: G5 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Symbol –VCBO –VCEO –VEBO –IC Ptot Tj Value 40 40 4 25 200 125 Unit V V V mA mW °C Symbol RthJA Value 450 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 15-Apr-96 1 (4) BF550/BF550R Electrical DC Characteristics Tamb = 25°C, unless otherwise specified Parameters / Test Conditions Collector-emitter cut-off current –VCE = 40, VBE = 0 ...