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STGWT60H65DFB Dataheets PDF



Part Number STGWT60H65DFB
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Trench gate field-stop IGBT
Datasheet STGWT60H65DFB DatasheetSTGWT60H65DFB Datasheet (PDF)

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel d.

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STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2 1 TO-3P Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 60 A • Tight parameter distribution • Safe paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Very fast soft recovery antiparallel diode Applications • Photovoltaic inverters • High-frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGW60H65DFB STGWT60H65DFB STGWA60H65DFB DS9535 - Rev 8 - July 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP (2)(3) Pulsed collector current Gate-emitter voltage VGE Transient gate-emitter voltage (tP ≤ 10 μs) Continuous forward current at TC = 25 °C IF Continuous forward current at TC = 100 °C IFP (2)(3) Pulsed forward current PTOT Total power dissipation at TC = 25 °C TSTG Storage temperature range TJ Operating junction temperature range 1. Current level is limited by bond wires. 2. Pulse width is limited by maximum junction temperature. 3. Defined by design, not subject to production test. Symbol RthJC RthJC RthJA Table 2. Thermal data Parameter Thermal resistance junction-case IGBT Thermal resistance junction-case diode Thermal resistance junction-ambient Value 650 80 (1) 60 240 ±20 ±30 80 (1) 60 240 375 -55 to 150 -55 to 175 Unit V A A A V V A A A W °C °C Value 0.4 1.14 50 Unit °C/W °C/W °C/W DS9535 - Rev 8 page 2/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Symbol V(BR)CES VCE(sat) VF VGE(th) ICES IGES Table 3. Static characteristics Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Gate threshold voltage Collector cut-off current Gate-emitter leakage current Test conditions VGE = 0 V, IC = 2 mA VGE = 15 V, IC = 60 A VGE = 15 V, IC = 60 A, TJ = 125 °C VGE = 15 V, IC = 60 A, TJ = 175 °C IF = 60 A IF = 60 A, TJ = 125 °C IF = 60 A, TJ = 175 °C VCE = VGE, IC = 1 mA VGE = 0 V, VCE = 650 V VCE = 0 V, VGE = ±20 V Min. 650 5 Typ. 1.60 1.75 1.85 2 1.7 1.6 6 Max. 2 2.6 7 25 ±250 Unit V V V V µA nA Symbol Cies Coes Cres Qg Qge Qgc Table 4. Dynamic characteristics Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 60 A, VGE = 0 to 15 V (see Figure 28. Gate charge test circuit) Min. - Typ. 7792 262 158 306 126 58 Max. - Unit pF pF pF nC nC nC DS9535 - Rev 8 page 3/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol Parameter td(on) tr Turn-on delay time Current rise time (di/dt)on Turn-on current slope td(off) Turn-off delay time tf Current fall time Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy Ets Total switching energy td(on) tr Turn-on delay time Current rise time (di/dt)on Turn-on current slope td(off) Turn-off-delay time tf Current fall time Eon (1) Turn-on switching energy Eoff (2) Turn-off switching energy Ets Total switching energy 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Test conditions VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V (see Figure 27. Test circuit for inductive load switching) VCE = 400 V, IC = 60 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Min. - Typ. 66 38 1216 210 20 1590 900 2490 59 40 1230 242 147 2860 1255 4115 Max. - Unit ns ns A/µs ns ns µJ µJ µJ ns ns A/µs ns ns µJ µJ µJ Symbol trr Qrr Irrm dIrr/dt Err trr Qrr Irrm dIrr/dt Err Table 6. Diode switching characteristics (inductive load) Parameter Reverse recovery time Reverse recovery charge Reverse recovery current Peak rate of fall of reverse recovery current during tb Reverse recovery energy Test conditions IF = 60 A, VR = 400 V, VGE = 15 V, di/dt = 100 A/µs (see F.


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