STGWA60V60DF

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB   TO-247 long leads Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 60 A Tight parameter distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode 3 2 1 TO-3P Figure 1. Internal schematic diagram C (2 or TAB) Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters G (1) E (3) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature...