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MGF0904A

Mitsubishi

High-power GaAs FET


Description
< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm High power added efficiency P....



Mitsubishi

MGF0904A

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