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IGA03N120H2

Infineon

IGBT

IGA03N120H2 HighSpeed 2-Technology • Designed for: - TV – Horizontal Line Deflection • 2nd generation HighSpeed-Techn...


Infineon

IGA03N120H2

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Description
IGA03N120H2 HighSpeed 2-Technology Designed for: - TV – Horizontal Line Deflection 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =3A - simple Gate-Control PG-TO220-3-31 Qualified according to JEDEC1 for target applications (FullPAK) Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO220-3-34 (FullPAK) Type VCE IC Eoff Tj,max Marking Package IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-31 IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-34 Maximum Ratings Parameter Collector-emitter voltage Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter volta...




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