IGBT
IGA03N120H2
HighSpeed 2-Technology
• Designed for: - TV – Horizontal Line Deflection
• 2nd generation HighSpeed-Techn...
Description
IGA03N120H2
HighSpeed 2-Technology
Designed for: - TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A - simple Gate-Control
PG-TO220-3-31
Qualified according to JEDEC1 for target applications
(FullPAK)
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO220-3-34 (FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-31
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 PG-TO-220-3-34
Maximum Ratings
Parameter
Collector-emitter voltage Triangular collector peak current (VGS = 15V) TC = 100°C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C Gate-emitter volta...
Similar Datasheet
- IGA03N120H2 IGBT - Infineon