BZT52-C10S

BZT52-C2V4S thru BZT52-C39S SURFACE MOUNT SILICON ZENER DIODES VOLTAGE FEATURES Planar Die construction 200mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automated Assembly Processes 2.4 - 39 Volts POWER 200 mWatts PACKAGE SOD-323 MECHANICAL DATA Case: SOD-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation (Notes A) at 25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction and StorageTemperature Range Symbol Value 200 2.0 -55 to +150 Units mW Amps O PD IFSM TJ C NOTES: A. Mounted on 5.0mm2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. Part Number: BZT52-C2V4S thru BZT52-C39S PAGE 1 BZT52-C2V4S thru BZT52-C39S ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100mA for all types. Nominal Zener Voltage Part Number No m. V Max. Zener Impedance Z ZT @ I ZT Z ZK @ I ZK Ω mA Max Reverse Leakage Current IR @ V R µA V Typical Temp. Coefficient TC V Z @ IZT M i n. V M a x. V P ackag e Ω mA 200 mWatts Zener Diodes BZT52-C2V4S BZT52-C2V7S BZT52-C3S BZT52-C3V3S BZT52-C3V6S BZT52-C3V9S BZT52-C4V3S BZT52-C4V7S BZT52-C5V1S BZT52-C5V6S BZT52-C6V2S BZT52-C6V8S BZT52-C7V5S BZT52-C8V2S BZT52-C9V1S BZT52-C10S BZT52-C11S BZT52-C12S BZT52-C...