M59DR008F

M59DR008E M59DR008F 8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory PRODUCT PREVIEW s SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.2V: for Program, Erase and Read – VPP = 12V: optional Supply Voltage for fast Program and Erase s ASYNCHRONOUS PAGE MODE READ – Page Width: 4 words – Page Access: 35ns – Random Access: 100ns s PROGRAMMING TIME – 10µs by Word typical – Double Word Programming Option s MEMORY BLOCKS – Dual Bank Memory Array: 4 Mbit - 4 Mbit – Parameter Blocks (Top or Bottom location) – Main Blocks s DUAL BANK OPERATIONS – Read within one Bank while Program or Erase within the other – No delay between Read and Write operations s BLOCK PROTECTION/UNPROTECTION – All Blocks protected at Power Up – Any combination of Blocks can be protected – WP for Block Locking s COMMON FLASH INTERFACE (CFI) s 64 bit SECURITY CODE s ERASE SUSPEND and RESUME MODES s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1pp...