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BUK9M6R6-30E
N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33
19 September 2016
Product data sheet
1. General description
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2. Features and benefits
• Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
3. Applications
• 12 V automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11 resistance
Dynamic characteristics
QGD
gate-drain charge
ID = 20 A; VDS = 24 V; VGS = 5 V;
Tj = 25 °C; Fig. 13; Fig. 14
Min Typ Max Unit - - 30 V - - 70 A - - 75 W
- 5.5 6.6 mΩ
- 7.8 - nC
Nexperia
BUK9M6R6-30E
N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 S Source
2 S Source
3 S Source
4 G Gate
mb D
Mounting base; connected to drain
1234
LFPAK33 (SOT1210)
Graphic symbol
D
G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BUK9M6R6-30E
LFPAK33
Description
Plastic single ended surface mounted package (LFPAK33); 8 leads
Version SOT1210
7. Marking
Table 4. Marking codes Type number BUK9M6R6-30E
Marking code 96E630
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
DC; Tj ≤ 175 °C
Pulsed; Tj ≤ 175 °C
Ptot
total power dissipation
Tmb = 25 °C; Fig. 1
ID drain current
VGS = 5 V; Tmb = 25 °C; Fig. 2
VGS = 5 V; Tmb = 100 °C; Fig. 2
IDM peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
[1][2]
Min -10 -15 -
Max 30 30 10 15 75 70 54.7 309
Unit V V V V W A A A
BUK9M6R6-30E
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2016
© Nexperia B.V. 2017. All rights reserved
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Nexperia
BUK9M6R6-30E
N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33
Symbol
Parameter
Tstg storage temperature
Tj junction temperature
Source-drain diode
IS source current
ISM peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche energy
Conditions
Min Max Unit -55 175 °C -55 175 °C
Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
ID = 70 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 5 V; .