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BUK9M6R6-30E Dataheets PDF



Part Number BUK9M6R6-30E
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet BUK9M6R6-30E DatasheetBUK9M6R6-30E Datasheet (PDF)

BUK9M6R6-30E N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level ga.

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BUK9M6R6-30E N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications • 12 V automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig. 1 Static characteristics RDSon drain-source on-state VGS = 5 V; ID = 20 A; Tj = 25 °C; Fig. 11 resistance Dynamic characteristics QGD gate-drain charge ID = 20 A; VDS = 24 V; VGS = 5 V; Tj = 25 °C; Fig. 13; Fig. 14 Min Typ Max Unit - - 30 V - - 70 A - - 75 W - 5.5 6.6 mΩ - 7.8 - nC Nexperia BUK9M6R6-30E N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S Source 2 S Source 3 S Source 4 G Gate mb D Mounting base; connected to drain 1234 LFPAK33 (SOT1210) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name BUK9M6R6-30E LFPAK33 Description Plastic single ended surface mounted package (LFPAK33); 8 leads Version SOT1210 7. Marking Table 4. Marking codes Type number BUK9M6R6-30E Marking code 96E630 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C VDGR drain-gate voltage RGS = 20 kΩ VGS gate-source voltage DC; Tj ≤ 175 °C Pulsed; Tj ≤ 175 °C Ptot total power dissipation Tmb = 25 °C; Fig. 1 ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 VGS = 5 V; Tmb = 100 °C; Fig. 2 IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 [1][2] Min -10 -15 - Max 30 30 10 15 75 70 54.7 309 Unit V V V V W A A A BUK9M6R6-30E Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2016 © Nexperia B.V. 2017. All rights reserved 2 / 13 Nexperia BUK9M6R6-30E N-channel 30 V, 6.6 mΩ logic level MOSFET in LFPAK33 Symbol Parameter Tstg storage temperature Tj junction temperature Source-drain diode IS source current ISM peak source current Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Conditions Min Max Unit -55 175 °C -55 175 °C Tmb = 25 °C pulsed; tp ≤ 10 µs; Tmb = 25 °C - ID = 70 A; Vsup ≤ 30 V; RGS = 50 Ω; VGS = 5 V; .


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