DF2B29FU

ESD Protection Diodes Silicon Epitaxial Planar DF2B29FU DF2B29FU 1. Applications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For detail information, please contact to our sales. 3. Packaging and Internal Circuit USC 1: Pin 1 2: Pin 2 ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2017-12-22 Rev.2.0 DF2B29FU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage(IEC61000-4-2)(Air) VESD (Note 1) ±25 kV Electrostatic discharge voltage(ISO10605)(Contact) Electrostatic discharge voltage(ISO10605)(Air) VESD (Note 2) ±30 kV Peak pulse power Peak pulse current Junction temperature Storage temperature PPK IPP (Note 3) Tj Tstg 140 3 150 -55 to 150 W A   Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semic...