Protection Diodes. DF2B29FU Datasheet

DF2B29FU Diodes. Datasheet pdf. Equivalent

Part DF2B29FU
Description ESD Protection Diodes
Feature ESD Protection Diodes Silicon Epitaxial Planar DF2B29FU DF2B29FU 1. Applications • ESD Protection .
Manufacture Toshiba Semiconductor
Datasheet
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DF2B29FU
ESD Protection Diodes Silicon Epitaxial Planar
DF2B29FU
DF2B29FU
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Features
(1) AEC-Q101 qualified (Note 1)
Note 1: For detail information, please contact to our sales.
3. Packaging and Internal Circuit
USC
1: Pin 1
2: Pin 2
©2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-05
2017-12-22
Rev.2.0



DF2B29FU
DF2B29FU
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage(IEC61000-4-2)(Air)
VESD
(Note 1)
±25
kV
Electrostatic discharge voltage(ISO10605)(Contact)
Electrostatic discharge voltage(ISO10605)(Air)
VESD
(Note 2)
±30
kV
Peak pulse power
Peak pulse current
Junction temperature
Storage temperature
PPK
IPP (Note 3)
Tj
Tstg
140
3
150
-55 to 150
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to ISO10605. (@ C = 330 pF, R = 2 k)
Note 3: According to IEC61000-4-5.
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-22
Rev.2.0





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