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K03H1202 Dataheets PDF



Part Number K03H1202
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet K03H1202 DatasheetK03H1202 Datasheet (PDF)

IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - TV – Horizontal Line Deflection  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Integrated anti-parallel diode - Eoff optimized for IC =3A G E PG-TO220-3-31 (FullPAK) PG-TO220-3-34 (FullPAK)  Qualified according to JE.

  K03H1202   K03H1202


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IKA03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Designed for: - TV – Horizontal Line Deflection  2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Integrated anti-parallel diode - Eoff optimized for IC =3A G E PG-TO220-3-31 (FullPAK) PG-TO220-3-34 (FullPAK)  Qualified according to JEDEC2 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKA03N120H2 IKA03N120H2 VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150C 150C Marking Package K03H1202 PG-TO-220-3-31 K03H1202 PG-TO-220-3-34 Maximum Ratings Parameter Collector-emitter voltage Triangular collector peak current (VGE = 15V) TC = 100C, f = 32kHz Pulsed collector current, tp limited by Tjmax Turn off.


B32-470-LF K03H1202 M50944-XXXSP


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