planer transistor. XP04314 Datasheet

XP04314 transistor. Datasheet pdf. Equivalent

Part XP04314
Description Silicon NPN/PNP epitaxial planer transistor
Feature Composite Transistors XP04314 (XP4314) Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epi.
Manufacture Panasonic Semiconductor
Datasheet
Download XP04314 Datasheet

Composite Transistors XP04314 (XP4314) Silicon NPN epitaxial XP04314 Datasheet
Recommendation Recommendation Datasheet XP04314 Datasheet





XP04314
Composite Transistors
XP04314 (XP4314)
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
I Features
G Two elements incorporated into one package.
(Transistors with built-in resistor)
G Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
16
25
34
Unit: mm
I Basic Part Number of Element
G UNR2214(UN2214) + UNR2114(UN2114)
I Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Tr1 Collector to emitter voltage
Collector current
Collector to base voltage
Tr2 Collector to emitter voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
VCBO
VCEO
IC
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Emitter (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr1) 5 : Base (Tr2)
3 : Collector (Tr2) 6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: CA
Internal Connection
Tr1
1
6
25
34
Tr2
Note.) The Part number in the Parenthesis shows conventional part number.
1



XP04314
Composite Transistors
I Electrical Characteristics (Ta=25˚C)
G Tr1
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = 10µA, IE = 0
IC = 2mA, IB = 0
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VCE = 10V, IC = 5mA
IC = 10mA, IB = 0.3mA
VCC = 5V, VB = 0.5V, RL = 1k
VCC = 5V, VB = 2.5V, RL = 1k
VCB = 10V, IE = –1mA, f = 200MHz
min
50
50
80
4.9
–30%
0.17
XP04314
typ max Unit
V
V
0.1 µA
0.5 µA
0.2 mA
0.25 V
V
0.2 V
10 +30% k
0.21 0.25
150 MHz
G Tr2
Parameter
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Resistance ratio
Transition frequency
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1/R2
fT
Conditions
IC = –10µA, IE = 0
IC = –2mA, IB = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
min
–50
–50
80
–4.9
–30%
0.17
typ max Unit
V
V
– 0.1 µA
– 0.5 µA
– 0.2 mA
– 0.25 V
V
– 0.2
V
10 +30% k
0.21 0.25
80 MHz
2





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