BZT52-C6V8

BZT52-C2V4 thru BZT52-C39 SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 39 Volts POWER 410 mWatts FEATURES Planar Die construction 410mW Power Dissipation Zener Voltages from 2.4V - 39V Ideally Suited for Automated Assembly Processes MECHANICAL DATA Case: SOD-123, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Below Approx. Weight: 0.008 grams Mounting Position: Any SOD-123 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Power Dissipation (Notes A) at 25OC Peak Forward Surge Current, 8.3ms single half sine-wave superimposed on rated load (JEDEC method) (Notes B) Operating Junction and StorageTemperature Range Symbol Value 410 2.0 -55 to +150 Units mW Amps O PD IFSM TJ C NOTES: A. Mounted on 5.0mm 2(.013mm thick) land areas. B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. Part Number: BZT52-C2V4 - BZT52-C39 PAGE 1 BZT52-C2 thru BZT52-C39 ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=100mA for all types. Nominal Zener Voltage @ Iz =5mA Part Number No m. V Dynamic Resistance Impedance Z ZT @ I ZT Z ZK @ I ZK Ω mA Max Reverse Leakage Current IR @ V R nA V Max. Zener Current IZM @ T A mA V Z @ IZT M i n. V M a x. V P ackag e Ω mA BZT52-C2V4 BZT52-C2V7 BZT52-C3 BZT52-C3V3 BZT52-C3V6 BZT52-C3V9 BZT52-C4V3 BZT52-C4V7 BZT52-C5V1 BZT52-C5V6 BZT52-C6V2 BZT52-C6V8 BZT52-C7V5 BZT52-C8V2 BZT52-C9V1 BZT52-...