NPN transistor. BLD122D Datasheet

BLD122D transistor. Datasheet pdf. Equivalent

Part BLD122D
Description Silicon NPN transistor
Feature BLD122D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 .
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download BLD122D Datasheet

Shenzhen SI Semiconductors Co., LTD. Product Specificatio BLD122D Datasheet
BLD122D Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 BLD122D Datasheet
Shenzhen SI Semiconductors Co., LTD. Product Specificatio BLD122DL Datasheet
Recommendation Recommendation Datasheet BLD122D Datasheet





BLD122D
BLD122D
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.

用途 / Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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BLD122D
BLD122D
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
600
400
9.0
1.3
1.0
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
符号
Symbol
Collector to Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
hFE(1)
DC Current Gain
hFE(2)
hFE(3)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
Base to Emitter Saturation Voltage VBE(sat)
Fall time
tf
Storage time
ts
Transition Frequency
fT
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
IC=0
VCB=600V IE=0
VCE=400V IB=0
VEB=9.0V IC=0
VCE=5V
IC=200mA
VCE=5V
IC=1mA
VCE=5V
IC=1.2A
IC=500mA Ib=100mA
IC=1.0A
Ib=500mA
IC=500mA Ib=100mA
VCE=5V
(UI9600)
IC=0.25A
VCE=10V
f=1MHz
IC=0.1A
最小值 典型值 最大值 单位
Min Typ Max Unit
600 V
400 V
9.0 V
0.1 mA
0.1 mA
0.1 mA
10 40
7
5
0.5 V
0.6 V
1.2 V
0.8 μS
3.5 μS
5 MHz
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