MJE13002

TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICP IB IBM PC TJ TSTG Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Total Dissipation at Ta = 25℃ Operation Junction Temperature Storage Temperature Tc: Case temperature (good cooling) Ta: Ambient temperature (without heat sink) Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms Value 600 400 9.0 1.25 2.5 12 0.8 - 40 ~ 150 - 40 ~ 150 Units V V V A A A A W ℃ ℃ TST002B1 Page 1 www.semiwill.com TST002 SEMI CONDUCTOR MJE13002 Electrical Characteristics...