RCR1515SG

RCR1515SG N-Channel Enhancement Mode MOSFET z Features z VDS VGS 20V 6V RDSon TYP 127mR@4V5 170mR@2V5 242mR@1V8 ID 0.9A z z General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications ¾ Replace Digital Transistor ¾ Battery Operated Systems ¾ Power Supply Converter Circuits ¾ Load/Power Switching Cell Phones, Pagers Pin configuration Top View D 3 12 GS z Package Information Package:SOT523 Unit:mm Dim Min Typ Max A 0.1 0.2 0.3 B 1.10 1.20 1.30 C 0.17 0.22 0.27 D 0.95 1.00 1.05 E 0.09 0.125 0.16 F 0.525 0.575 0.60 G 1.5 1.6 1.7 1/5 RCR1515SG z Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±6 Drain Current (Note ...