Mode MOSFET. RCR1515SM Datasheet

RCR1515SM MOSFET. Datasheet pdf. Equivalent

Part RCR1515SM
Description N-Channel Enhancement Mode MOSFET
Feature RCR1515SM N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5A RDS(ON) = 28mΩ @ VG.
Manufacture RCR
Datasheet
Download RCR1515SM Datasheet

RCR1515SM N-Channel Enhancement Mode Field Effect Transisto RCR1515SM Datasheet
Recommendation Recommendation Datasheet RCR1515SM Datasheet





RCR1515SM
RCR1515SM
N-Channel Enhancement Mode Field Effect Transistor
z Features
20V/5A
RDS(ON) = 28mΩ @ VGS = 4.5V
RDS(ON) = 38mΩ @ VGS = 2.5V
Low VGS(TH)
SOT89 Package
z Pin Configurations
z General Description
The RCR1515SM uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.RCR1515SM are electrically
identical.-RoHS Compliant
z Package Information
z Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
TA=25°C
TA=70°C
ID
Drain Current (Pulse)
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Ratings
20
±12
5
4
20
1
0.7
Unit
V
V
A
A
W
1/5



RCR1515SM
RCR1515SM
Operating Temperature/ Storage Temperature
TJ//TSTG
-55~150
z Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous
Current
V(BR)DSS
IDSS
VGS(TH)
IGSS
RDS(on)
gFS
VSD
IS
VGS = 0V, ID=250μA
VDS = 20 V , VGS = 0V
VGS = VDS , IDS=250μA
VGS=±12V , VDS=0V
VGS = 4.5V , ID = 3A
VGS =2.5V , ID = 2A
VDS=10V, ID=6A
ISD=1A , VGS=0V
20 25
--
V
-- -- 1 μA
0.6 0.84
1
V
-- -- 100 nA
-- 23 28 mΩ
-- 31 38 mΩ
-- 5 -- S
--
0.71
1.0
V
-- -- 1.7 A
Pulsed Body-Diode Current
ISM
-- -- 20 A
Switching
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VGS=4.5V, VDS=10V, ID=6A
-- 6.3 8.1 nC
-- 1.7 2.2 nC
-- 1.4 1.8 nC
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
td ( on )
tr
td( off )
tf
VDS = 10V, ID = 1Α,
VGS = 4.5V, RG = 6
--
10.4
20.8
ns
-- 4.4 8.8 ns
--
27.4
54.8
ns
-- 4.2 8.4 ns
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 8V, VGS = 0V,F = 1.0MHz
-- 522.3 --
-- 98.5 --
-- 74.7 --
pF
pF
pF
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any
given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t10s junction to ambient thermal resistance rating.
2/5





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)