Planar Transistor. 2SA1015 Datasheet

2SA1015 Transistor. Datasheet pdf. Equivalent

Part 2SA1015
Description Silicon Epitaxial Planar Transistor
Feature Silicon Epitaxial Planar Transistor FEATURES z Complementary To 2SC1815. z Excellent HFE Linearity..
Manufacture GME
Datasheet
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2SA1015
Silicon Epitaxial Planar Transistor
FEATURES
z Complementary To 2SC1815.
z Excellent HFE Linearity.
Pb
Lead-free
z High voltage and high current.
z Low noise.
z Collector-Emitter voltage BVCEO=-50V.
APPLICATIONS
z Low frequency , low noise amplifier.
Production specification
2SA1015
SOT-23
ORDERING INFORMATION
Type No.
Marking
2SA1015
BA
Package Code
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-50 V
VCEO
Collector-Emitter Voltage
-50 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-150
mA
PC Collector Dissipation
400 mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
C011
Rev.A
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2SA1015
Production specification
Silicon Epitaxial Planar Transistor
2SA1015
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
-5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO VCB=-50V,IE=0
ICEO VCE=-50V,IB=0
IEBO VEB=-5V,IC=0
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
VCE=-6V,IC=-2mA
70
400
hFE
VCE=-6V,IC=-150mA
25 80
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
IC=-100 mA, IB=- 10mA
IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
f=30MHz
-0.1 -0.3
-1.1
V
V
80 MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
130-200
H
200-400
C011
Rev.A
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