NPN transistor. MJE13003VI1 Datasheet

MJE13003VI1 transistor. Datasheet pdf. Equivalent

Part MJE13003VI1
Description Silicon NPN transistor
Feature MJE13003VI1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download MJE13003VI1 Datasheet

MJE13003VI1 Rev.E Mar.-2016 DATA SHEET / Descriptions TO- MJE13003VI1 Datasheet
Recommendation Recommendation Datasheet MJE13003VI1 Datasheet





MJE13003VI1
MJE13003VI1
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
耐压高,开关速度快,安全工作区宽。 
High voltage capability, high speed switching, wide SOA.
用途 / Applications
适用于 110V 电路、节能灯、电子镇流器。
Suitable for 110V circuit mode, fluorescent lamp, electronic ballast.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13003VI1
MJE13003VI1
Rev.E Mar.-2016
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
DATA SHEET
数值
Rating
400
200
9
2.5
1.0
150
-55150
单位
Unit
V
V
V
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
VCBO
VCEO
VEBO
Collector Cut-Off Current
ICBO
Collector cut-off current
ICEO
Emitter Base Cut-Off Current
IEBO
hFE(1)
DC Current Gain
hFE(2)
hFE(3)
Collector to Emitter Saturation
Voltage
VCE(sat)(1)
VCE(sat)(2)
Base to Emitter Saturation Voltage VBE(sat)
Fall time
ts
Storage time
tf
Transition Frequency
fT
测试条件
Test Conditions
IC=1mA
IE=0
IC=10mA IB=0
IE=1mA
VCB=400V
VCE=200V
VEB=9.0V
VCE=5.0V
VCE=5.0V
VCE=5.0V
IC=2.5A
IC=1.0A
IC=2.5A
VCE=5V
(UI9600)
VCE=10V
f=1MHz
IC=0
IE=0
IB=0
IC=0
IC=0.2A
IC=1mA
IC=2.5A
IB=0.5A
IB=0.2A
IB=0.5A
IC=0.25A
IC=0.2A
最小值 典型值 最大值 单位
Min Typ Max Unit
400 V
200 V
9V
0.1 mA
0.1 mA
0.1 mA
10 40
7
5
1.3 V
0.5 V
1.5 V
1.5 3.5 μs
0.6 μs
4 MHz
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