POWER TRANSISTORS. MJE13004 Datasheet

MJE13004 TRANSISTORS. Datasheet pdf. Equivalent

Part MJE13004
Description NPN PLASTIC POWER TRANSISTORS
Feature Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLAST.
Manufacture CDIL
Datasheet
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MJE13004
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN PLASTIC POWER TRANSISTORS
MJE13004
MJE13005
TO-220
Plastic Package
Switchmode Series NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Sustaining Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
*Peak
Base Current Continuous
*Peak
Emitter Current Continuous
*Peak
Power Dissipation upto Ta=25ºC
Derate above=25ºC
Power Dissipation upto Tc=25ºC
Derate above=25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO (sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
Tj, Tstg
* Pulse Test: Pulse Width =5ms, Duty Cycle<10%
MJE13004
300
600
MJE13005
400
700
9
4
8
2
4
6
12
2
16
75
600
- 65 to +150
UNIT
V
V
V
A
A
A
A
A
A
W
mW/ºC
W
mW/ºC
ºC
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in free air
Maxmium Lead Temperature for
Soldering Purpose 1/8" from Case for 5
Seconds
Rth (j-c)
Rth (j-a)
TL
1.67 ºC/W
62.5 ºC/W
275 ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter sustaining voltage **VCEO(sus)
IC=10mA, IB=0
MJE13004
MJE13005
Collector Cut off Current
ICEV VCEV=Rated Value,VBE=(off)=1.5V
Emitter Cut off Current
DC Current Gain
IEBO
**hFE
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
TC=100ºC
VCEV=Rated Value,VBE=(off)=1.5V
VEB=9V, IC=0
IC=1A, VCE=5V
IC=2A, VCE=5V
MIN
300
400
10
8
TYP
MAX
1.0
5.0
1.0
60
40
UNIT
V
V
mA
mA
mA
Continental Device India Limited
Data Sheet
Page 1 of 4



MJE13004
NPN PLASTIC POWER TRANSISTORS
MJE13004
MJE13005
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Saturation Voltage
**VCE(sat)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=4A, IB=1A
IC=2A, IB=0.5A, Tc=100ºC
Base Emitter Saturation Voltage
**VBE(sat)
IC=1A, IB=0.2A
IC=2A, IB=0.5A
IC=2A, IB=0.5A, Tc=100ºC
Current Gain-Bandwidth Product
fT IC=500mA,VCE=10V, f=1MHz
Output Capacitance
Cob VCB=10V, IE=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Resistive Load
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
td
tr
ts
tf
TEST CONDITION
VCC=125V, IC=2A, IB1=IB2=0.4A,
tp=25µs, Duty Cycle<1%
Inductive Load, Clamped
Voltage Storage Time
tsv
Crossover Time
Fall Time
tC
tfi
**Pulse Test: Pulse Width=300µs, Duty Cycle<2%
VClamp=300V, IC=2A, IB1=0.4A,
VBE(off)=5V, Tc=100ºC
MIN TYP MAX
0.5
0.6
1.0
1.0
1.2
1.6
1.5
4
65
MIN TYP MAX
0.1
0.7
4.0
0.9
4.0
0.9
0.16
UNIT
V
V
V
V
V
V
V
MHz
pF
UNIT
µs
µs
µs
µs
µs
µs
µs
Continental Device India Limited
Data Sheet
Page 2 of 4





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