NPN transistor. STBV32 Datasheet

STBV32 transistor. Datasheet pdf. Equivalent

Part STBV32
Description Silicon NPN transistor
Feature STBV32 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 P.
Manufacture BLUE ROCKET ELECTRONICS
Datasheet
Download STBV32 Datasheet

STBV32 High voltage fast-switching NPN power transistor Fea STBV32 Datasheet
STBV32 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 N STBV32 Datasheet
Recommendation Recommendation Datasheet STBV32 Datasheet





STBV32
STBV32
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征 / Features
高压性能好,低动态参数变化,开关速度快。 
High voltage capability,Low spread of dynamic parameters,Very high switching speed.
用途 / Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路 / Equivalent Circuit
引脚排列 / Pinning
1 23
PIN1Base
PIN 2Collector
PIN 3Emitter
放大及印章代码 / hFE Classifications & Marking
见印章说明。See Marking Instructions.
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STBV32
STBV32
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25)
参数
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Peak Collector Current - Continuous
Base Current - Continuous
Peak Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
符号
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
Tj
Tstg
数值
Rating
700
400
9.0
1.5
3.0
0.5
1.5
1.0
150
-55150
单位
Unit
V
V
V
A
A
A
A
W
电性能参数 / Electrical Characteristics(Ta=25)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
Collector Cut-Off Current
符号
Symbol
VCES
测试条件
Test Conditions
IC=1mA
VBE=0
最小值 典型值 最大值 单位
Min Typ Max Unit
700 V
VCEO IC=10mA IB=0
400
V
VEBO
ICEV
IE=1mA
VCE=700V
IC=0
VBE=-1.5V
9
V
0.1 mA
Collector cut-off current
ICEO
VCE=400V IB=0
0.1 mA
Emitter Base Cut-Off Current
IEBO VEB=9.0V IC=0
0.1 mA
DC Current Gain
hFE(1)
hFE(2)
VCE=2.0V
VCE=2.0V
IC=0.5A
IC=1.0A
10
5
35
25
Collector to Emitter Saturation
Voltage
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
IC=500mA
IC=1.0A
IC=1.5A
IB=100mA
IB=250mA
IB=500mA
0.5 V
1.0 V
1.5 V
Base to Emitter Saturation Voltage *VBE(sat)1 IC=500mA IB=100mA
1.0 V
Base to Emitter Saturation Voltage *VBE(sat)2 IC=1.0A
IB=250mA
1.2 V
Fall time
Storage time
tf VCE=5V IC=0.25A
tS (UI9600)
0.6 μs
3.0 μs
Transition Frequency
fT
VCE=10V
f=1MHz
IC=0.1A
5
MHz
*脉冲测试:脉冲周期=300μS,占空比=1.5%   *Pulsed:Pulsed duration=300μs,duty cycle1.5%.
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