NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
• DIE SIZE • METALLIZATION
Top Bac...
NPN EPITAXIAL SILICON
TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR
DIE SIZE METALLIZATION
Top Back DIE THICKNESS PASSIVATION BONDING PAD SIZE Emitter Base
350µm×350µm
Al V/ Ni/Au Typ. 220µm Silicon-Nitride
140µm×140µm 110µm×110µm
H9014
hFE CLASSIFICATION
Classification hFE
A 60~150
B 100~300
CD 200~600 400-1000
Collector on Backside
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL TEST CONDITION
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage
BVCBO BVCEO BVEBO
ICBO IEBO
hFE VCE(sat)
IC=100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0
VCE=5V, IC=-1mA IC=100mA, IB=-5mA
MIN 50 45 5
60
TYP
280 0.14
MAX
50 50 1000 0.3
UNIT V V V nA nA
V
NOTES: Due to probe testing limitations, only the DC parameters are tested.
DS-H9014-001
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