H9014

Shantou Huashan Electronic Devices Co.,Ltd. NPN SILICON TRANSISTOR H9014 █ PRE-AMPLIFIER，LOW LEVEL & LOW NOISE █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………450mW VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………45V 1―Emitter，E 2―Base，B 3―Collector，C VEBO——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………100mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol ICBO IEBO HFE(1) VCE(sat) VBE(sat) BVCBO BVCEO BVEBO Cob fT Characteristics Min Typ Max Unit Test Conditions Collector Cut-off Current 0.05 μA VCB=30V, IE=0 Emitter Cut-off Current 0.05 μA VEB=5V, IC=0 DC Curren...