LNJ236W82RA

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ236W82RA Forward current IF (mA) (planed maintMeaniantnecnReeatlanFytociprvee/e,walDriumdsmacciiunonrtorntueeisnnntiaunItneFecdn(esiittmnyycAlp)(ue,d%)eplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Hight Bright Surface Mounting Chip LED ESS Type  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Power dissipation PD 55 Forward current IF 20 Pulse forward current * IFP 60 Reverse voltage VR 4 Operating ambient temperature Topr –30 to +85 Storage temperature Tstg –40 to +100 Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Unit mW mA mA V °C °C  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Luminous intensity *1 IO IF = 5 mA Reverse current IR VR = 4 V Forward voltage VF IF = 5 mA Peak emission wavelength Dominant emission wavelength *2 λP IF = ...