LNJ308G83RA

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ308G83RA Hight Bright Surface Mounting Chip LED SS Type Forward current IF (mA) (planed maintMeaniantneRcenelaaFttoniyrvcpewee/al,ruDdimmsciaunciroorntuenstenitinnnItauFenenc(sdietimytnAy)c(lpu%e),deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Power dissipation PD Forward current IF Pulse forward current * IFP Reverse voltage VR Operating ambient temperature Topr Storage temperature Tstg Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. 55 20 60 4 –25 to +85 –40 to +100 Unit mW mA mA V °C °C  Electro-Optical Characteristics Ta = 25°C Parameter Symbol Conditions Luminous intensity Reverse current Forward voltage Peak emission wavelength Spectral half band width IO IF = 10 mA IR VR = 4 V VF IF = 10 mA λP IF = 10 mA Δλ IF = 10 mA...