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Light Emitting Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
LNJ808K87RA
Hight Bright Surface Mounting Chip LED
SS Type
Forward current IF (mA) (planed maintMeaniantnecRneelataFtnyoircpveewe/,alruDidmmsciaciunronortunetesintinnnaItuFenenc(dsieitmtynAyc)l(pue%,d)eplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Power dissipation
PD 55
Forward current
IF 20
Pulse forward current *
IFP 100
Reverse voltage
VR 4
Operating ambient temperature
Topr –25 to +85
Storage temperature
Tstg –40 to +100
Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.
mW mA mA V °C °C
Electro-Optical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Luminous intensity * Reverse current
Forward voltage
Peak emission wavelength Spectral half band width Note) *: Measurement tolerance: ±20%
IO IF
100 50 30
10 5.