LNJ836W86RA

Light Emitting Diodes This product complies with the RoHS Directive (EU 2002/95/EC). LNJ836W86RA Hight Bright Surface Mounting Chip LED ESS Type Forward current IF (mA) (planed maintMeanianRtnelecaFnteioatrvnyewclparuee/,dmiDcinmusroarciuesonntitntneitInenFanus(nietcmdyeiA)(tnyc%l)pue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Power dissipation PD 55 mW Forward current IF 20 mA Pulse forward current * IFP 60 mA Reverse voltage VR 4 V Operating ambient temperature Topr –30 to +85 °C Storage temperature Tstg –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec.  Electro-Optical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Luminous intensity *1 IO IF = 5 mA Reverse current IR VR = 4 V Forward voltage VF IF = 5 mA Peak emission wavelength Dominant emission wavelength *2 λP IF ...