Flash Memory. MT29F64G08CFACB Datasheet

MT29F64G08CFACB Memory. Datasheet pdf. Equivalent

Part MT29F64G08CFACB
Description NAND Flash Memory
Feature Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features.
Manufacture Micron
Datasheet
Download MT29F64G08CFACB Datasheet

Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256G MT29F64G08CFACB Datasheet
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MT29F64G08CFACB
Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
Features
NAND Flash Memory
MT29F32G08CBACA, MT29F64G08CEACA, MT29F64G08CFACA,
MT29F128G08CXACA, MT29F64G08CECCB, MT29F64G08CFACB
MT29F128G08CKCCB, MT29F256G08CUCCB
Features
• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 4320 bytes (4096 + 224 bytes)
– Block size: 256 pages (1024K + 56K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 32Gb: 4096 blocks;
64Gb: 8192 blocks;
128Gb: 16,384 blocks
256Gb: 32,768 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 52
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– Read/write throughput per pin: 50 MT/s
tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 75µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3.8ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when ship-
ped from factory. For minimum required ECC, see
Error Management (page 108).
• RESET (FFh) required as first command after pow-
er-on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware meth-
od for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: JESD47 compliant; see qualifica-
tion report
– Endurance: 3000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA
Notes:
1. The ONFI 2.2 specification is available at
www.onfi.org.
2. BGA devices up to synchronous timing
mode 5. TSOP devices up to synchronous
timing mode 4.
PDF: 09005aef844335a5
l73a_32g_64g_128g_256g_asyncsync_nand.pdf – Rev. D 12/11 EN
1 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.



MT29F64G08CFACB
Micron Confidential and Proprietary
32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND
Features
Part Numbering Information
Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by
using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type,
visit www.micron.com/products. Contact the factory for devices not found.
Figure 1: Part Numbering
MT 29F 32G 08 C B A C A WP
Micron Technology
NAND Flash
29F = NAND Flash memory
Density
32G = 32Gb
64G = 64Gb
128G = 128Gb
256G = 256Gb
Device Width
08 = 8 bits
Level
Bit/Cell
C 2-bit
Classification
Die # of CE# # of R/B# I/O
B1
1
1 Common
E2
2
2 Separate
F2
2
2 Common
K4
2
2 Separate
U8
4
4 Separate
X4
4
2 Separate
Operating Voltage Range
A = VCC: 3.3V (2.7–3.6V), VCCQ: 3.3V (2.7–3.6V)
C = VCC: 3.3V (2.7–3.6V), VCCQ: 1.8V (1.7–1.95V)
Note: 1. Pb-free package.
ES :C
Design Revision
C = Third revision
Production Status
Blank = Production
ES = Engineering sample
Reserved for Future Use
Blank
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Speed Grade (synchronous mode only)
-10 = 200 MT/s
-12 = 166 MT/s
Package Code
D1 = 52-pad VLGA 11mm x 14mm x 0.9mm1
H1 = 100-ball VBGA 12mm x 18mm x 1.0mm1
H2 = 100-ball TBGA 12mm x 18mm x 1.2mm 1
H3 = 100-ball LBGA 12mm x 18mm x 1.4mm 1
WP = 48-pin TSOP1 (CPL)
Interface
A = Async only
B = Sync/Async
Generation Feature Set
C = Third set of device features
PDF: 09005aef844335a5
l73a_32g_64g_128g_256g_asyncsync_nand.pdf – Rev. D 12/11 EN
2 Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2010 Micron Technology, Inc. All rights reserved.





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