Power MOSFET. CS8N65ARR Datasheet

CS8N65ARR MOSFET. Datasheet pdf. Equivalent

Part CS8N65ARR
Description Silicon N-Channel Power MOSFET
Feature Silicon N-Channel Power MOSFET CS8N65 ARR ○R General Description: CS8N65 ARR, the silicon N-chann.
Manufacture Huajing Microelectronics
Datasheet
Download CS8N65ARR Datasheet

Silicon N-Channel Power MOSFET CS8N65 ARR ○R General Descr CS8N65ARR Datasheet
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CS8N65ARR
Silicon N-Channel Power MOSFET
CS8N65 ARR
R
General Description
CS8N65 ARR, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-262,
which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson1.0)
l Low Gate Charge (Typical Data:29nC)
l Low Reverse transfer capacitances(Typical:6.6pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
8
120
0.86
Rating
650
8
5
32
±30
500
5.0
120
0.96
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
WUXI CHI NA RESOU RCES HUAJ I NG MI CROELECTRONI CS CO., LTD. Pag e 1 of 1 0
2016V01



CS8N65ARR
CS8N65 ARR
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS =650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS =+30V
VGS =-30V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=4A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VDS=15V, ID =4A
VGS = 0V VDS = 25V
f = 1.0MHz
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
ID =8A VDD = 325V
RG =10
ID =8A VDD =520V
VGS = 10V
Rating
Min. Typ. Max.
650 -- --
-- 0.7 --
-- --
1
-- -- 100
-- -- 100
-- -- -100
Unit
s
V
V/
µA
µA
nA
nA
Rating
Min. Typ. Max.
-- 0.86 1.0
2.0 -- 4.0
Units
V
Rating
Min. Typ. Max.
-- 7.5 --
-- 1540 --
-- 123 --
-- 6.6 --
Units
S
pF
Rating
Min. Typ. Max.
-- 24 --
-- 18 --
-- 50 --
-- 18 --
-- 29 --
-- 6 --
-- 11.3 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 20 16V0 1





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