75V MOSFET. LTP85N07 Datasheet

LTP85N07 MOSFET. Datasheet pdf. Equivalent


Part LTP85N07
Description N-Channel 75V MOSFET
Feature N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technolo.
Manufacture LITE-ON
Datasheet
Download LTP85N07 Datasheet

N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low LTP85N07 Datasheet
Recommendation Recommendation Datasheet LTP85N07 Datasheet




LTP85N07
N-Channel 75V MOSFET
Features
• 100% Avalanched Tested
• Low On-Resistance
• Trench Process Technology
• Fast Switching
• 175°C Operation Temperature
• Marking: LTP85N07
• Qualified to AEC-Q101 Rev_C
• Weight: 1.877g
• RoHS Compliant
Application
• E-bike Appliances
• Motor / Fan Driver
• SMPS Appliances
• High Power System
LTP85N07
BVDSS=75V ,
RDS(ON) 9m@VGS=10V
ID=85A
D:Drain
G:Gate
S:Source
(TO-220AB)
Top View
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Continuous Drain Current 1
Pulsed Drain Current2
TC=25°C
TC=100°C
ID
IDM
Power Dissipation
Single Pulsed Avalanche Energy3
TC=25°C
PD
EAS
Operating Junction and Storage Temperature Range
Thermal Characteristics
PARAMETER
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
TJ, Tstg
SYMBOL
RthJc
RthJA
Rev.2, Mar. 2016 , KTLC07
VALUE
75
±20
85
77
340
150
287
-55 to175
TYP
1.0
62.5
UNIT
V
V
A
A
W
mJ
°C
UNIT
°C /W
1



LTP85N07
N-Channel 75V MOSFET
Electrical Characteristics (TA =25°C Unless Otherwise Specified)
PARAMETER
TEST CONDITION
SYMBOL
STATIC
MIN
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance4
DYNAMIC
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V, VGS=±20V
VDS=60V,VGS=0V
VGS=10V,ID=40A
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
75
2
--
--
--
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode
VGS=10V,VDS=37.5V,ID=80A
VGS=0V,VDS=25V,
F=1MHz
VGS = 10V, VDS = 37.5V,
RG = 4.7, ID=40A
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
Continuous Source Current
Pulsed Source Current
Integral reverse PN diode in
the MOSFET
IS --
ISM --
Diode Forward voltage
ISD=85A,VGS=0V
VSD --
Reverse Recovery Time
Reverse Recovery Charge
IF=85A,VDD=54.4V,
dI/dt=100A/uS
Trr --
Qrr --
Notes:
(1). Limited by bonding wire
(2). Pulse width300uS, duty cycle2%
(3). Starting Tj 25°C , ID=47A, VDD=40V
(4). Pulse Test: Pulse width < 400us,duty cycle 2%
(5). LiteON Semiconductor reserves the right to improve product design, functions and reliability without notice
LTP85N07
TYP MAX UNIT
-- -- V
-- 4 V
-- ±100 nA
-- 1 uA
7.2 9 m
100
20.5
40.5
4600
380
200
22.5
47
74
26
--
--
--
--
--
--
--
--
--
--
nC
pF
nS
-- 85
A
-- 340
-- 1.3 V
30 -- nS
20 -- nC
Rev.2, Mar. 2016 , KTLC07
2





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