MOS FET. FC8V3303 Datasheet

FC8V3303 FET. Datasheet pdf. Equivalent


Part FC8V3303
Description Silicon N-channel MOS FET
Feature This product complies with the RoHS Directive (EU 2002/95/EC). FC8V3303 Silicon N-channel MOS FET F.
Manufacture Panasonic
Datasheet
Download FC8V3303 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC FC8V3303 Datasheet
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Recommendation Recommendation Datasheet FC8V3303 Datasheet




FC8V3303
This product complies with the RoHS Directive (EU 2002/95/EC).
FC8V3303
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview
FC8V3303 is the N-channel dual type MOSFET which is the most suitable for
DC-DC converter circuits.
Features
N-channel dual type
Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V)
Small size surface mounting package: WMini8-F1 (2.9 mm × 2.8 mm × 0.8 mm)
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Packaging
FC8V33030L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current *1
t = 10 s
VDSS
VGSS
ID
33
±20
6.5
8
V
V
A
Peak drain current *1, 2
Souce current (Body diode)
Power dissipation *1
t = 10 s
IDP
IS
(BD)
PD
26
6.5
1
1.5
A
A
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25.4 mm × 0.8 mm
*2: Pulse test: Ensure that the channel temperature does not exceed 150°C
Package
Code
WMini8-F1
Package dimension clicks here.
Pin Name
1: Source-1
2: Gate-1
3: Source-2
4: Gate-2
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbol: 6A
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (G) (S) (G)
Publication date: February 2012
Ver. AED
1



FC8V3303
FC8V3303
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
VDSS ID = 1 mA, VGS = 0
33
Drain-source cutoff current
IDSS VDS = 33 V, VGS = 0
10
Gate-source cutoff current
IGSS VGS = ±16 V, VDS = 0
±10
Gate threshold voltage
VTH ID = 0.48 mA, VDS = 10 V
1 2.5
Drain-source ON resistance
RDS(on)
ID = 3.3 A, VGS = 10 V
ID = 3.3 A, VGS = 4.5 V
15 20
22 35
Short-circuit input capacitance (Common source) Ciss
360
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0, f = 1 MHz
70
Reverse transfer capacitance (Common source)
Turn-on delay time *2
Rise time *2
Turn-off delay time *2
Fall time *2
Crss
td(on)
tr
td(off)
tf
VDD = 15 V, VGS = 0 V to 10 V, ID = 3.3 A
VDD = 15 V, VGS = 10 V to 0 V, ID = 3.3 A
50
8
3
24
9
Gate charge load
Qg
3.8
Gate-source charge
Qgs VDD = 15 V, VGS = 0 V to 4.5 V, ID = 6.5 A
1.4
Gate-drain charge
Qgd
1.6
Body diode characteristics
Drain-source voltage *1
VSD IS = 3.3 A, VGS = 0
0.8 1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse test: Ensure that the channel temperature does not exceed 150°C
*2: Measurement circuit
VIN
10 V
0V
PW = 10 µs
Duty Cycle 1%
VIN
50
G
VDD = 15 V
ID = 3.3 A
D VOUT
S
VIN
VOUT
90%
10%
90%
10%
td(on) tr
td(off) tf
Unit
V
mA
mA
V
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2 Ver. AED







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