MOS FET. FC8J3304 Datasheet

FC8J3304 FET. Datasheet pdf. Equivalent


Part FC8J3304
Description Silicon N-channel MOS FET
Feature This product complies with the RoHS Directive (EU 2002/95/EC). FC8J3304 Silicon N-channel MOS FET .
Manufacture Panasonic
Datasheet
Download FC8J3304 Datasheet


This product complies with the RoHS Directive (EU 2002/95/EC FC8J3304 Datasheet
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FC8J3304
This product complies with the RoHS Directive (EU 2002/95/EC).
FC8J3304
Silicon N-channel MOS FET
For DC-DC converter circuits
Overview
FC8J3304 is N-channel dual type small signal MOS FET employed small size
surface mounting package.
Features
Low drain-source ON resistance: RDS(on) typ. = 32 mW (VGS = 10 V)
High-speed switching: Qg = 2.8 nC
Small size surface mounting package: WMini8-F1
Contributes to miniaturization of sets, mount area reduction
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
Gate-source surrender voltage
Drain current *1
Peak drain current *1, 2
Souce current (Body diode)
t = 10 s
Power dissipation *1
t = 10 s
VDSS
VGSS
ID
IDP
IS
(BD)
PD
33
±20
5
5.5
20
5
1
1.3
V
V
A
A
A
W
Channel temperature
Tch 150 °C
Storage temperature
Tstg –55 to +150 °C
Note) *1: Mounted on a glass epoxy PC board: 25.4 mm × 25.4 mm × 0.8 mm
*2: Pulse measurement: Channel temperature not to exceed 150°C
Package
Code
WMini8-F1
Pin Name
1: Source
2: Gate
3: Source
4: Gate
5: Drain
6: Drain
7: Drain
8: Drain
Marking Symbol: 7A
Internal Connection
(D) (D) (D) (D)
8765
1234
(S) (G) (S) (G)
Publication date: September 2011
Ver. AED
1



FC8J3304
FC8J3304
This product complies with the RoHS Directive (EU 2002/95/EC).
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Drain-source surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate threshold voltage
VDSS
IDSS
IGSS
VTH
ID = 1 mA, VGS = 0 V
VDS = 33 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
ID = 0.26 mA, VDS = 10 V
33
1
±10
1 2.5
Drain-source ON resistance *1
RDS(on)
ID = 2.5 A, VGS = 10 V
ID = 2.5 A, VGS = 4.5 V
32 38
48 68
Short-circuit input capacitance (Common source) Ciss
220
Short-circuit output capacitance (Common source) Coss VDS = 10 V, VGS = 0 V, f = 1 MHz
40
Reverse transfer capacitance (Common source)
Turn-on delay time *2
Rise time *2
Turn-off delay time *2
Fall time *2
Crss
td(on)
tr
td(off)
tf
VDD = 15 V, VGS = 0 V to 10 V, ID = 2.5 A
VDD = 15 V, VGS = 10 V to 0 V, ID = 2.5 A
35
7
3
15
9
Gate charge load
Qg
2.8
Gate-source charge
Qgs VDD = 15 V, VGS = 0 V to 4.5 V, ID = 5 A
1.1
Gate-drain charge
Qgd
1.2
Body diode characteristics
Drain-source voltage *1
VSD IS = 2.5 A, VGS = 0 V
0.8 1.2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement: Channel temperature not to exceed 150°C
*2: Measurement circuit
VIN
10 V
0V
PW = 10 µs
Duty Cycle 1%
VIN
50
G
VDD = 15 V
ID = 2.5 A
D VOUT
S
VIN
VOUT
90%
10%
90%
10%
td(on) tr
td(off) tf
Unit
V
mA
mA
V
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
2 Ver. AED







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